Showing 113–128 of 312 results

CDIL-TBC817.25

BC817 BC818

SOT-23 Formed SMD Package

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Application General Purpose and Switching Applications

BRAND TRANSISTORS SKU
CDIL C-TBC817.40 BC817-40CDIL SOT23
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CDIL-TBC846B

BC846 BC847 BC848

SOT-23 Formed SMD Package

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Application General purpose switching applications

BRAND TRANSISTORS SKU
CDIL C-TBC847B BC847CDIL SOT23
DOWNLOADS:

CDIL-TBC857B

BC856, BC857, BC858

SOT-23 Formed SMD Package

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Application  General-purpose switching and amplification

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CDIL-TBCX56-16

BCX56.16

SOT-89 Plastic Package

NPN SILICON EPITAXIAL PLANAR TRANSISTOR

Application Medium Power Switching or Amplification.

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CDIL-TBX53.16

BCX53.16

SOT-89

PNP SILICON EPITAXIAL PLANAR TRANSISTOR

Application Medium Power Switching or Amplification Applications

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CDIL-TMJD122

MJD122 MJD127

DPAK (TO-252) Plastic Package

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Application General Purpose Amplifier and Low Speed Switching.

BRAND POWER TRANSISTOR SKU
CDIL C-TMJD127 MJD127CDIL TO252
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CDIL-TSM712

SM712

ASYMMETRICAL TVS DIODE

(FOR EXTENDED COMMON - MODE RS-485)

 

SOT 23 Surface Mount Package

 

Application:

1. SM712 transient voltage suppressor(TVS) diode is designed for asymmetrical (12V to-7V) protection in muti-point data transmission standard RS-485 applications.

2. Communication Systems & Cellular Phones

3. Security Systems, Automatic Teller Machine

4. HFC Systems 5. Networks

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L6561ST SOIC

L6561 is the improved version of the L6560 standard Power Factor Corrector. Fully compatible with the standard version, it has a superior performant multiplier making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of mA and a disable function has been implemented on the ZCD pin, guaranteeing lower current consumption in stand by mode. Realised in mixed BCD technology, the chip gives the following benefits: micro power start up current 1% precision internal reference voltage (T j = 25°C) Soft Output Over Voltage Protection no need for external low pass filter on the current sense very low operating quiescent current minimises power dissipation The totem pole output stage is capable of driving a Power MOS or IGBT with source and sink currents of ±400mA. The device is operating in transition mode and it is optimised for Electronic Lamp Ballast application, AC-DC adaptors and SMPS.