CDIL-TBC817.25
BC817 BC818
SOT-23 Formed SMD Package
NPN SILICONÂ PLANARÂ EPITAXIALÂ TRANSISTORS
Application General Purpose and Switching Applications
| BRAND | TRANSISTORS | SKU |
| CDIL | C-TBC817.40 | BC817-40CDIL SOT23 |
DOWNLOADS:
- Datasheet for   BC817 BC818
CDIL-TBC846B
BC846 BC847 BC848
SOT-23 Formed SMD Package
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Application General purpose switching applications
| BRAND | TRANSISTORS | SKU |
| CDIL | C-TBC847B | BC847CDIL SOT23 |
DOWNLOADS:
- Datasheet for BC846 BC847 BC848
CDIL-TBC857B
BC856, BC857, BC858
SOT-23 Formed SMD Package
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Application General-purpose switching and amplification
DOWNLOADS:
- Datasheet for BC856,BC857,BC858
CDIL-TBCX56-16
BCX56.16
SOT-89 Plastic Package
NPN SILICON EPITAXIAL PLANAR TRANSISTOR
Application Medium Power Switching or Amplification.
DOWNLOADS:
- Datasheet for BCX56
CDIL-TBX53.16
BCX53.16
SOT-89
PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Application Medium Power Switching or Amplification Applications
DOWNLOADS:
- Datasheet for BCX53.16
CDIL-TMJD122
MJD122 MJD127
DPAK (TO-252) Plastic Package
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
Application General Purpose Amplifier and Low Speed Switching.
| BRAND | POWER TRANSISTOR | SKU |
| CDIL | C-TMJD127 | MJD127CDIL TO252 |
DOWNLOADS:
- Datasheet for  MJD122 NPN MJD127 PNP
CDIL-TSM712
SM712
ASYMMETRICAL TVS DIODE
(FOR EXTENDED COMMON - MODE RS-485)
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SOT 23 Surface Mount Package
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Application:
1. SM712 transient voltage suppressor(TVS) diode is designed for asymmetrical (12V to-7V) protection in muti-point data transmission standard RS-485 applications.
2. Communication Systems & Cellular Phones
3. Security Systems, Automatic Teller Machine
4. HFC Systems 5. Networks
DOWNLOADS:
- Datasheet for SM712
L6561ST SOIC
L6561 is the improved version of the L6560 standard Power Factor Corrector. Fully compatible with the standard version, it has a superior performant multiplier making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of mA and a disable function has been implemented on the ZCD pin, guaranteeing lower current consumption in stand by mode.
Realised in mixed BCD technology, the chip gives the following benefits: micro power start up current 1% precision internal reference voltage (T j = 25°C) Soft Output Over Voltage Protection no need for external low pass filter on the current sense very low operating quiescent current minimises power dissipation
The totem pole output stage is capable of driving a Power MOS or IGBT with source and sink currents of ±400mA. The device is operating in transition mode and it is optimised for Electronic Lamp Ballast application, AC-DC adaptors and SMPS.