All features
- Full diode bridge with integrated clamping protection
- Peak pulse power dissipation: PPP = 500 W (8/20 µs)
- Breakdown voltage: VBRÂ = 6 V min.
- Very low capacitance, compatible with high debit data or signal rates.
USB6B1ST SOIC
In order to prevent fast transients from leading to severe damages in a high speed data system, a specific protection has been developed by STMicroelectronics.
The USB6B1 protects the two input lines against overvoltage. Besides, this device also keeps the power rails in a safe limit thanks to the integrated Transil diode.
Description
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